Toshiba Corporation today announced a rail-to-rail output gate drive optocoupler in a low-profile SO6L package for direct drive of low and medium power insulated gate bipolar transistors (IGBTs) and power metal oxide semiconductor field effect transistors (power MOSFETs) ). Mass production shipments will start on the same day.
The new optocouplers include the "TLP5751" for driving low-power IGBTs and the "TLP5752" and "TLP5754" for driving medium-power IGBTs, all in a low-profile SO6L package. Compared with Toshiba products in DIP8 package, the new product is only 54% higher than the former, and the installation area is only 43% of the former, which helps to develop a slimmer and compact device. Despite its low height, the new product guarantees a creepage distance of 8mm and an insulation voltage of 5kV, making it suitable for applications requiring high insulation specifications.
In terms of electrical characteristics, the new optocoupler has a rail-to-rail output that achieves higher efficiency by extending the operating voltage range at full swing output. The new products offer three output currents of 1A, 2.5A and 4A to meet a wide range of user needs. The new product also incorporates Toshiba's original high-power infrared LEDs for a variety of applications, including applications requiring high thermal stability, such as factory automation, home photovoltaic power systems, digital home appliances, and uninterruptible power supplies (UPS).
New product main specifications
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